Combined effects of temperature, irradiation flux, and modulation frequency on the minority carrier density distribution in the base of an irradiated bifacial silicon solar cell (n⁺/p/p⁺)

This work presents a theoretical study of the combined influence of temperature, irradiation flux, damage coefficient, and modulation frequency on the distribution of the minority carrier density in the base of an irradiated silicon bifacial (n⁺/p/p⁺) solar cell. The model is based on the solution of the continuity equation under dynamic conditions with frequency-modulated polychromatic illumination, while taking into account the modifications of the transport properties induced by irradiation and temperature. The minority carrier density profiles are analyzed as a function of the base depth under different operating conditions. The results show that increasing the irradiation flux and the damage coefficient reduces the minority carrier density due to the creation of defects that enhance carrier recombination. Conversely, an increase in temperature improves carrier diffusion and leads to an increase in their density within the base. The study also highlights the effect of modulation frequency on the spatial distribution of carriers, revealing the dynamic nature of charge transport in the solar cell. These results contribute to a better understanding of the physical mechanisms governing the operation of bifacial photovoltaic solar cells subjected to harsh environments and provide a useful basis for their optimization.